Browsing by Subject "Exposed to"

Now showing items 1-5 of 5

    • Article  

      Effect of head posture on the healthy human carotid bifurcation hemodynamics 

      Papaharilaou, Yannis; Aristokleous, Nicolas; Seimenis, Ioannis; Khozeymeh, M. I.; Georgiou, Georgios C.; Brott, B. C.; Eracleous, Eleni A.; Anayiotos, Andreas S. (2013)
      Head and neck postures may cause morphology changes to the geometry of the carotid bifurcation (CB) that alter the low and oscillating wall shear stress (WSS) regions previously reported as important in the development of ...
    • Article  

      Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Travlos, A.; Luculescu, C. R. (2015)
      Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
    • Article  

      Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Travlos, A.; Luculescu, C. R. (2015)
      Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
    • Article  

      Surface passivation and conversion of SnO2 to SnS2 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Luculescu, C. R. (2015)
      SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
    • Article  

      Surface passivation and conversion of SnO2 to SnS2 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Luculescu, C. R. (2015)
      SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...